AlGaAs/GaAs HFET power devices for J-band applications: performance dependence on gate recess geometry

摘要

We show in this work that Alo.25Gao.75/GaAs power HFETs can offer substantial performance improvement at J-Band over conventional GaAs power MESFET's with the same geometry. Further performance enhancement is offered by a non-lithographic gate etching technique able to downscale the gate length to 0.3 urn. The paper will discuss the advantages and possible limitations of this gate scaling process; in addition, evidence will be given of the good hot-electron reliability of these devices.