Pulsed Photon Annealing as an Alternative Method of Heat Treatment of Thin-Film Systems Tantalum, Titanium-Tungsten on Silicon

摘要

The phase transformation, impurity-redistributionprocesses, and electrical properties of Ta-Si, Ti-W-Si thin filmsystems (thickness-300 nm) are studied during the pulse photonand vacuum annealing by the methods of physicalmetallography. It is revealed the sequence of phasetransformations during annealing in studied systems; the pulsephoton annealing is the most effective method of heat treatment.It is studied a role of surface in processes of impurityredistribution over a film thickness.