THIN-FILM SEMICONDUCTOR STRUCTURE FOR ANNEALING, ANNEALING METHOD FOR THE THIN-FILM SEMICONDUCTOR, THIN-FILM SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE THIN-FILM SEMICONDUCTOR DEVICE, AND DISPLAY

摘要

PROBLEM TO BE SOLVED: To efficiently reduce the carbon concentration present in a semiconductor thin film, without requiring special manufacturing processes.;SOLUTION: A thin-film transistor has the amorphous semiconductor thin film, fused and recrystallized by an excimer laser and has an insulating substrate 10 for supporting the semiconductor thin film. Further, the thin-film transistor has an undercoat film 11, formed on the insulating substrate 10 as the foundation of the semiconductor thin film 12 and for so storing therein the carbon penetrating from the side of the insulating substrate 10 as to set the value of its carbon concentration to a value lower than that of the insulating substrate 10.;COPYRIGHT: (C)2005,JPO&NCIPI