首页> 外国专利> Annealing for thin-film semiconductor structure, annealing method for thin film semiconductor, thin film semiconductor device, thin film semiconductor device manufacturing method, and a display device.

Annealing for thin-film semiconductor structure, annealing method for thin film semiconductor, thin film semiconductor device, thin film semiconductor device manufacturing method, and a display device.

机译:用于薄膜半导体结构的退火,用于薄膜半导体的退火方法,薄膜半导体器件,薄膜半导体器件制造方法和显示器件。

摘要

PROBLEM TO BE SOLVED: To provide a thin-film semiconductor structural body for annealing that can efficiently drop oxygen concentration near the surface of an element formation side of a semiconductor thin film without a special manufacturing process, an annealing method for a thin-film semiconductor, a thin-film semiconductor device, a method for manufacturing the thin-film semiconductor device, and a display device.;SOLUTION: The semiconductor structural body for annealing is provided with an amorphous semiconductor thin film 12 containing oxygen, and a light transmission insulation film 13 that is provided on the surface of an element formation side of the semiconductor thin film 12 and transmits an energy light emitted to the semiconductor thin film 12.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种用于退火的薄膜半导体结构体,其可以在不经过特殊制造工艺的情况下有效地降低氧浓度在半导体薄膜的元件形成侧的表面附近,薄膜半导体的退火方法;一种薄膜半导体器件;一种制造该薄膜半导体器件的方法;以及一种显示器件。;解决方案:用于退火的半导体结构体具有含氧的非晶半导体薄膜12和透光绝缘层。膜13设置在半导体薄膜12的元件形成侧的表面上,并且将发出的能量光透射到半导体薄膜12 。;版权所有:(C)2005,JPO&NCIPI

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