Structure of Multilayered In_xGa_(1-x)As_(1-y)N/GaAs Systems by the Data of a Two-Crystal X-Ray Diffractometry

摘要

Using the high-resolution X-ray diffractometry, the systematic investigation of multilayered semiconductor structures with a quantum well is performed. The nitrogen content in a quantum well and barrier layers is determined by the simulation of measured rocking curves. The influence of smearing of the indium-distribution profile in a quantum well on rocking curves is revealed. The high sensitivity of rocking curves to these structural parameters is demonstrated.