METHOD OF DETERMINATION OF THICKNESSES OF GaAs AND Ga_1-xAl_xAs IN MULTILAYER STRUCTURES

摘要

FIELD: electronics. SUBSTANCE: in compliance with given method GaAs layer is treated in etching agent with following quantitative proportion of ingredients, volume parts: caustic ammonia 1; hydrogen peroxide 350-500. Then Ga_1-xAl_xAs layer is locally treated in concentrated hydrofluoric acid. Treatments are conducted at room temperature for the course of (1,05-1,10)τ, where t is time of removal of layer. Method is simple in realization. High precision of method makes it possible to measure thicknesses of both submicron and hyperfine layers. In this case limitations of ultimate content of aluminium are diminished independent of orientation of used substrate. EFFECT: increased precision of determination of thicknesses of GaAs and Ga_xAl_1-xAs layers where x ≥ 0,1 0.1. 1 tbl