MOCVD Ga_xIn_(1-x)As_(1-y)Sb_y Alloys and the Infrared Detector

摘要

GaxIn1-xAs1-ySby alloys have been grown by atmospheric pressure MOCVD on n-GaSb（Te-doped）substrate.The sohd composition was determined by using electron microprobe.The alloys of GalnAsSb withcomposition in miscibility gap were successfully grown.The optical properties of GaxIn1-xAs1-ySby laverswere characterized by the photoluminescence and the infrared absorption.The spectral responses ofp+-GaInAsSb/p-GaxIn1-xAs1-ySby/n-GaSb detectors showed wavelength cut off at 2.4μm and detectivity-D*=5×108 cmHz1/2/W at room temperature.