Influence of k • p Formalisms on the Band Structure of In_xGa_(1-x)As_(1-y)N_y/GaAs Quantum Well: A Comparison of 8-Band and 10-Band Models

摘要

The influence of two k • p formalisms, namely, the realistic 8-band and 10-band models, on the conduction and valence band structures of a 7 nm In_xGa_(1-x)As_(1-y)N_y/GaAs quantum well (QW) has been investigated. It is discovered that at high indium composition (35%), the energy dispersion curves calculated by the 8-band model, using electron effective mass (m_e~*) predicted by band-anticrossing (BAC) model, agrees very well with the results of 10-band model near the Brillouin zone center. However, at lower indium composition (15%), larger deviation of excited state energy level, such as e2, is found. In contrast to the previous reports that assume great enhancement of m_e~* even at indium of 30-40%, m_e~* extrapolated from the BAC model predicted a more modest enhancement that is weakened as the indium composition in the well layer is being increased.