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Metal complexes-based molecular materials as thin films on silicon substrates

机译:基于金属配合物的分子材料作为硅基底上的薄膜

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A tremendous effort has been devoted in the past two decades to the preparation and study of molecule-based materials derived from organometallic or metalorganic species.The work described in this paper is directed to the study of vapor deposited and electrodeposited thin films of these systems.Amorphous thin films of M(TCNE)_x(M=V,Cr,Nb,and Mo;tetracyanoeth-ylene(TCNE):(NC)2C=C(CN)2)are grown by chemical vapor deposition(CVD)from organometallic complexes and TCNE on(001)-oriented silicon substrates.The films are characterized by infrared spectroscopy,X-ray photoelectron spectroscopy,scanning electron microscopy,and magnetic measurements.Infrared spectra are dominated by CN stretching vibrations and show two main-v_(CN)bands,the positions and relative intensities of which are very similar to those obtained for solution grown M(TC-NE)_x,y solvent phases(M:first-row transition metal).X-ray photoelectron spectra also confirm the presence of reduced TCNE and low-oxidation state metal atoms in the deposited material.X-ray absorption spectroscopy measurements on CrCTCNE)_x films reveal an irregular octahedral environment for the chromium atoms(Cr-N distance of 2.03 A and Cr-N-C angle of about 160°).Magnetic studies show that M(TCNE)_x as thin films are magnetically ordered at low temperatures.Furthermore,after a several hours exposure to air,CVD-grown V(TCNE)_x films exhibit a spontaneous magnetization at room temperature.Ni(dithiolene)2-based molecular conductors,namely[(n-C4H9)4N]2[Ni(dcbdf)2]5,and TTF[Ni(dmit)2]2 are electrodeposited on intrinsic silicon wafers used as anodes(dcbdt~(2-):4,5-dicyanobenzene-1,2-difhiolato;TTF:tetrathiafulvalene;dmit~(2-):1,3-dithiole-2-thione-4,5-difhiolato).The films are studied by vibrational spectroscopies(Raman and infrared),X-ray photoelectron spectroscopy,X-ray powder diffraction,scanning electron microscopy,and transport measurements.In the former case,the films exhibit a semiconducting behavior with a room temperature conductivity of about 1.2X10~(-2)S cm~(-1).In the latter case,a metallike behavior is evidenced in the 14-300 K temperature range.The room temperature conductivity is found to be of ca.12 S cm~(-1),which is a non-negligible value,taking into account the presence of numerous inter-grain contacts within the film.
机译:在过去的二十年中,人们投入了大量的精力来制备和研究有机金属或有机金属物种的分子基材料。本文所述的工作旨在研究这些系统的气相沉积和电沉积薄膜。 M(TCNE)_x(M = V,Cr,Nb和Mo;非晶态四氰基乙烯(TCNE):( NC)2C = C(CN)2)的非晶薄膜通过有机金属化学气相沉积(CVD)生长(001)取向硅衬底上的配合物和TCNE。该膜的特征在于红外光谱,X射线光电子能谱,扫描电子显微镜和磁测量。红外光谱主要由CN拉伸振动控制,显示出两个主要的v_(CN谱带,其位置和相对强度与溶液生长的M(TC-NE)_x,y溶剂相(M:第一行过渡金属)获得的谱带非常相似.X射线光电子能谱也证实了还原的TCNE和低氧化态金属原子在CrCTCNE)_x膜上进行X射线吸收光谱测量,发现铬原子的不规则八面体环境(Cr-N距离为2.03 A,Cr-NC角约为160°)。磁性研究表明M( TCNE)_x薄膜在低温下会磁性排列。此外,在空气中暴露数小时后,CVD生长的V(TCNE)_x薄膜在室温下会自发磁化.Ni(dithiolene)2基分子导体即[(n-C4H9)4N] 2 [Ni(dcbdf)2] 5和TTF [Ni(dmit)2] 2电沉积在用作阳极的本征硅晶片上(dcbdt〜(2-):4,5-二氰基苯-1,2-二氟脲; TTF:四硫富瓦烯; dmit〜(2-):1,3-二硫代-2-硫酮-4,5-二氟脲)。通过振动光谱法(拉曼和红外)研究薄膜,X射线光电子能谱,X射线粉末衍射,扫描电子显微镜和传输测量。在前一种情况下,薄膜表现出具有室温导电性的半导体行为y约为1.2X10〜(-2)S cm〜(-1)。在后一种情况下,在14-300 K的温度范围内表现出类似金属的行为。室温电导率约为12 S cm〜(-1),这是不可忽略的值,考虑到薄膜中存在许多晶粒间接触。

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