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首页> 外文期刊>Journal of Low Temperature Physics >Thin films of molecular materials grown on silicon substrates by chemical vapor deposition and electrodeposition
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Thin films of molecular materials grown on silicon substrates by chemical vapor deposition and electrodeposition

机译:通过化学气相沉积和电沉积在硅基板上生长的分子材料薄膜

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Chemical vapor deposition (CVD) and electrodeposition (ED) were applied to grow thin films of molecule-based magnets and conductors. Chemical vapor deposited films are illustrated by the M(TCNE)x (M=V, Cr, Nb, Mo) magnet series. V(TCNE)x and Cr(TCNE)x are room-temperature magnets. XANES/EXAFS studies on the air-stable Cr(TCNE)x have been performed to determine the chemical environment of the chromium within the polymeric network. Electrodeposition on a silicon working electrode was applied to process thin films of numerous molecule-based conductors, namely, non-integral oxidation state compounds, charge transfer complexes, and singlecomponent molecular conductors. Among the series of conductive thin films, TTF[Ni(dmit)2]2 and Ni(tmdt)2 exhibit a metal-like behavior.
机译:应用化学气相沉积(CVD)和电沉积(ED)来生长基于分子的磁体和导体的薄膜。化学气相沉积膜由M(TCNE)x (M = V,Cr,Nb,Mo)磁体系列表示。 V(TCNE)x 和Cr(TCNE)x 是室温磁铁。对空气稳定的Cr(TCNE)x 进行了XANES / EXAFS研究,以确定聚合物网络中铬的化学环境。硅工作电极上的电沉积用于处理许多基于分子的导体的薄膜,即非整体氧化态化合物,电荷转移络合物和单组分分子导体。在一系列导电薄膜中,TTF [Ni(dmit)2 ] 2 和Ni(tmdt)2 表现出类似金属的行为。

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