化学气相沉积法于镓酸锂基板生长氧化锌薄膜的研究

摘要

Research of ZnO films growing on LiGaO2 (001) substrates by chemical vapor deposition method was made and the effects of growth temperature,growth pressure,and growth time on structure and properties of the films were discussed to find the best conditions for growing high quality films.Results showed that the high quality ZnO (0002) films grown on LiGaO2 (001) substrates could be obtained at the conditions of flow ratio of O2 to N2 of 600/400,growth temperature of 550 ℃,growth pressure of 6.67 kPa,and growth time of 60 min.%研究了利用化学气相沉积法在镓酸锂(001)基板上生长氧化锌薄膜,探讨了生长温度、生长压力、生长时间对薄膜结构与特性的影响,以期寻找出生长高品质氧化锌(0002)薄膜的最佳条件.研究结果表明,在氧气与氮气流量比为600/400、生长压力为6.67 kPa、生长温度为550℃、生长时间为60 min条件下,于镓酸锂(001)基板上能够生长出高质量的氧化锌(0002)薄膜.