The margin of the depth of focus in lithography becomes more critical as the ULSI design rulebecomes smaller. Chemical mechanical polishing (CMP) is an essential process for achieving a highdegree of planarity, utilizing the tribological phenomena occurring between polished materials, slurry,abrasive and chemicals, and polishing pad. It is important to quantitatively understand the mechanicaland chemical interactions of the above elements for the development of CMP processes. In order to investigate the mechanism of CMP, this paper discusses the effects of contactpressure distribution between wafer and pad in SiO{sub}2-CMP and the functions of the slurryingredients in Cu-CMP.
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