CHEMICAL MECHANICAL POLISHING METHOD, METHOD OF MANUFACTURING A FERRO-ELECTRIC CAPACITOR USING THE CHEMICAL MECHANICAL POLISHING METHOD AND METHOD OF MANUFACTURING A FERRO-ELECTRIC MEMORY DEVICE USING THE CHEMICAL MECHANICAL POLISHING METHOD

摘要

A CMP method and methods for manufacturing a ferroelectric capacitor and a ferroelectric memory device using the same are provided to polish stably a polishing object layer without the damage of a ferroelectric pattern using a slurry containing ceria. A ferroelectric pattern(11) containing a ferroelectric material with Ti and O2 is formed. The ferroelectric pattern is used as a polishing stop pattern. A polish object layer is formed on the ferroelectric pattern. The polishing object layer is performed with a CMP process by using a slurry containing ceria until the ferroelectric pattern is exposed to the outside.