Growth sequence dependence of threshold current density in GaInP/GaAs/GaInP laser diodes

摘要

It is well known that high-quality GaAs/GaInP interfaces are difficult to be grown by organometallic vapor phase epitaxy (OMVPE), because a lower-bandgap interlayer is formed because of the intermixing of P and As atoms at the heterointerfaces and/or In memory effect. 77K photoluminescence (PL) measurements revealed that a broad peak due to the interlayer, appearing at around 900 nm, originates from a GaAs-on-GaInP interface. The interlayer-related PL peak is suppressed completely by growing the GaAs-on-GaInP interface at temperatures 5500C or below. By applying this sequence for GaInP/GaAs/GaInP laser diodes, threshold current density is lower and more uniform than that of the higher growth temperature diodes.