首页> 外文会议>Solid State Device Research Conference, 1993. ESSDERC '93 >Investigation of the Temperature Dependence of Threshold Current Density of GaInP/AlGaInP Multi Quantum Well Lasers

【24h】

Investigation of the Temperature Dependence of Threshold Current Density of GaInP/AlGaInP Multi Quantum Well Lasers

机译：GaInP / AlGaInP多量子阱激光器阈值电流密度的温度依赖性研究

获取原文

页面导航

著录项
相似文献
相关主题

著录项

来源
《Solid State Device Research Conference, 1993. ESSDERC '93》|1993年|283-286|共4页
会议地点
作者
Barth F.; Klepser B.; Nagel S.; Ernst P.; Moser M.; Scholz F.; Schweizer H.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类非金属材料;
关键词

相似文献

外文文献
中文文献
专利

1. Low threshold current density operation of GaInP-AlGaInP visible multiple quantum wire-like lasers (MQWR-LDs) under the room temperature pulsed condition [J] . Yoshida J., Kishino K. IEEE Photonics Technology Letters . 1995,第3期

机译：GaInP-AlGaInP可见光多量子线状激光器（MQWR-LD）在室温脉冲条件下的低阈值电流密度操作
2. Temperature dependence of photoluminescence intensity from AlGaInP/GaInP multi-quantum well laser structures [J] . Liu CY, Yuan S, Dong JR, Journal of Crystal Growth . 2004,第3a4期

机译：AlGaInP / GaInP多量子阱激光结构的光致发光强度与温度的关系
3. Realization of band gap shrinkage to the spectral characteristics of high-luminous-efficiency 658 nm AlGaInP/GaInP multiple quantum well lasers at room temperatures [J] . Chackrabarti Santosh, Zargar Rayees A., Bansal Jyoti, Optical Materials . 2016,第Auga期

机译：在室温下实现带隙收缩到高发光效率658 nm AlGaInP / GaInP多量子阱激光器的光谱特性
4. Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double heterostructure lasers [C] . Hagen, S.H., Valster, . 1990

机译：GaInP / AlGaInP双异质结构激光器阈值电流密度的温度依赖性研究
5. InAsP/GaInP strain-compensated multiple quantum wells and their optical modulator applications. [D] . Mei, Xiaobing. 1997

机译：InAsP / GaInP应变补偿多量子阱及其光调制器应用。
6. Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell [O] . Senlin Li, Jingfeng Bi, Mingyang Li, 2015

机译：GaInAs应变降低层与嵌入三结GaInP / Ga（In）As / Ge太阳能电池Ga（In）As子电池中的InAs量子点结合的研究
7. Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers [O] . Smowton Peter Michael, Blood Peter 1995

机译：GaInP /（AlyGa1-y）InP 670 nm量子阱激光器的阈值电流温度依赖性
8. Quantum Well Width Dependence of Threshold Current Density in InGaN Lasers;Applied Physics Letters [R] . Amano, H. , Chow, W. W. , Han, J. , 1999

机译：InGaN激光器中阈值电流密度的量子阱宽度依赖性;应用物理快报

获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

客服微信
服务号