Semiconductor laser and crystal growth method of A ▲ l ▼ GaInP crystal system - The

摘要

PURPOSE:To stably obtain the title crystal regardless of the growth conditions by forming nearly grid-matched Ga0.5In0.5P crystal on a GaAs base plate having a specified surface bearing by an organic metallic vapor phase epitaxial layer methods etc. CONSTITUTION:A GaAs base plate (A) is obtained by manufacturing a base plate wherein a face bearing is equivalent to (110) face and equivalent to (111) face. Then both a group II raw material (B) such as trimethyl indium and triethyl gallium and a V group raw material (C) such as phosphine are allowed to flow on the plate A while fixing the flow rate of the component B and changing the flow rate of the component (C) and regulating a component ratio C/B to 60-450 and an epitaxial layer is grown at 600-750 deg.C and grid-matched Ga0.5In0.5P crystal (D) having about 1.84eV energy gap(Eg) as a base face is obtained. Then AlGaInP-base crystal and a semiconductor laser are produced by forming the component D nearly grid-matched with the plate A or crystal shown in a formula (0x1) as an active layer on the plate A in accordance with necessity.