CRYSTAL GROWTH METHOD OF GROUP III-V COMPOUND SEMICONDUCTOR, GROUP III-V COMPOUND SEMICONDUCTOR LAYER, SEMICONDUCTOR LASER ELEMENT, AND APPLICATION SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a crystal growth method of a group III-V compound semiconductor, in which crystallinity is high and light emitting efficiency is improved, containing at least gallium (Ga), indium (In), nitrogen (N), and arsenic (As).;SOLUTION: In the crystal growth method, modulation is performed five times so that the quantity of In source (TMIn) to be supplied per unit time, illustrated in Fig.(B), and the quantity of N source (DMeHy) to be supplied per unit time, illustrated in Fig.(D), asynchronously change with the same phase within a crystal growth time T2. Furthermore, the quantity of raw materials to be supplied per unit time is modulated, so that the quantity of Ga source (TMGa) to be supplied per unit time, illustrated in Fig.(A), synchronously changes with an inverse phase to the quantity of In source (TMIn) to be supplied per unit time, illustrated in Fig.(B). Thus, the binding density of In and N becomes more than the binding density of Ga and N, thereby promoting binding of N atoms and In atoms.;COPYRIGHT: (C)2006,JPO&NCIPI