Production of a III-V compound semiconductor used in the production of a semiconductor element comprises forming a strip mask on a crystal substrate layer, and growing a III-V semiconductor layer on the crystal substrate layer

摘要

Production of a III-V compound semiconductor comprises forming a strip mask (4) on a crystal substrate layer containing a III-V semiconductor of formula: GabAlcN (where a = 0-1, b = 0-1, c = 0-1, and a + b + c = 1) whose surface is the c-plane, and growing a III-V semiconductor layer (3) of formula: InxGayAlzN (where x = 0-1, z = 0-1, and x + y + z = 1) on the crystal substrate layer. The strip mask is formed on the crystal substrate layer so that the strip direction is rotated by 0.095 degrees or more and less than 9.6 degrees with respect to the direction. The III-V semiconductor layer is produced by organometallic vapor phase epitaxy or hybrid vapor phase epitaxy.