Studies of the Growth of Single Crystal Layers of Semiconductors on Dielectric Substrates

摘要

The purpose of this program was to increase understanding of the basic factors controlling the deposition (nucleation and growth) of single-crystal layers of semiconductors onto dielectric substrates. In addition, it was desired, if feasible, to limit nucleation to a single site, or a small number of sites, in a controlled area, and to grow laterally to desired dimensions. In order to determine the conditions required for the control of nucleation in this manner and to obtain information regarding the factors affecting nucleation, critical condensation tests were performed in two systems - (A) from silane-hydrogen mixtures onto sapphire substrates, and (B) by evaporation from CdS onto sapphire and pyrex substrates. (Author)