Low temperature epitaxial growth of 3C-SiC by triode plasma CVD using dimethylsilane and hydrogen

摘要

The cubic-silicon carbide (3C-SiC) were grown at low temperatures on Si substrates by triode plasma CVD. By the high density hydrogen radicals generated by rf plasma, epitaxial growth at 900℃ was realized, while the growth by low pressure CVD was realized at higher than 950℃. The activation energy of epitaxial growth rate was 48kcal/mol, which was about 25kcal/mol smaller than that of low pressure CVD.