Low Temperature Heteroepitaxial Growth of 3C-SiC on Silicon Substrates by Triode Plasma Chemical Vapor Deposition using Dimethylsilane

摘要

The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source g