Etch Characteristics of TiO2 Etched by Using an Atomic Layer Etching technique with BCl3 Gas and an Ar Neutral Beam

摘要

The etch characteristics of TiO2 etched by using an atomic-layer-etching technique (ALET) with a BCl3/Ar neutral beam were investigated. In addition, the surface composition after the etching by using the ALET was compared with that after the etching by using an inductively coupled plasma (ICP). By supplying BCl3 gas at partial pressures >0.16 mTorr and by using Ar beam irradiation at doses >1.49 x 10(17) atoms/cm(2).cycle, we could obtain a saturated etch rate of 1.25 angstrom/cycle (one monolayer /cycle). Therefore, by adjusting the number of etch cycles, we could control the etch depth with atomic precision. When the surface compositions of TiO2 after etching by using ALET and by using an ICP were compared, no change of the surface composition was observed for the sample surface after the ALET while a Ti-rich surface was observed after the ICP etching.