ATOMIC LAYER ETCHING METHOD USING A NEUTRAL BEAM ETCHING APPARATUS CAPABLE OF PERFORMING ATOMIC LAYER ETCHING OF A HIGH DIELECTRIC MATERIAL USING BCl3 GAS AND ADDITIVE GAS

摘要

PURPOSE: An atomic layer etching method using a neutral beam etching apparatus is provided to effectively etch an etched layer comprised of a high dielectric material.;CONSTITUTION: An etched substrate exposing an etched layer is mounted on a stage in a reaction chamber. An etching gas comprised of BCl3 in a reaction chamber through showering inside the reaction chamber is absorbed on the etched layer comprised of a high dielectric material by supplying the etching gas. The excessive etching gas remained after absorption is purged by applying purge gas through a purge gas supply pipe installed in one side of the reaction chamber. A neutral beam is projected on the etched layer with absorbed etching gas. An etching by-product generated by neutral beam projection is eliminated by supplying the purge gas.;COPYRIGHT KIPO 2012