High-current Electro-optical Degradation of InGaN/GaN Light-emitting Diodes Fabricated with Ag-based Reflectors

摘要

We have investigated the degradation of the optical power and the operating voltage ofInGaN/GaN light-emitting diodes (LEDs) fabricated with Ag-based reflectors during electricaland thermal stress. As the electrical stress increased from 50 mA to 200 mA at a thermal stressof 100 °C, the optical power was significantly reduced. The decrease in optical power was closelycorrelated to a rapid increase in operating voltage due to an increase in the parasitic seriesresistance during the accelerated current aging test.