Can we fabricate efficient white-light InGaN/GaN quantum-well light-emitting diode without using phosphors?

机译：我们可以生产高效的白光Ingan / GaN量子阱发光二极管，无需使用磷光体？

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We report some recent developments in all-semiconductor multi-color and white-light light-emitting diodes. The potential of the development of phosphor-free all-InGaN/GaN quantum-well white-light light-emitting diode will be evaluated.

机译：我们报告了全半导体多色和白光发光二极管的一些最新发展。将评估无磷全察纳/ GaN量子孔井白光发光二极管的发育的潜力。

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来源
《Quantum Electronics and Laser Science Conference》|2007年||共1页
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C. C. Yang; Chi-Feng Huang; Dong-Ming Yeh; Cheng-Yen Chen; Chih-Feng Lu; Tsung-Yi Tang; Jeng-Jie Huang; Yen-Cheng Lu; Yung-Shen Chen; Wen-Yu Shiao; Kun-Ching Shen; Yun-Li Li; J. J. Huang;
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中图分类 TN24-53;
关键词
Light-emitting diodes; Quantum-well devices;

机译：发光二极管;量子阱器件;

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专利

1. Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells [J] . Chi-Feng Huang, Chih-Feng Lu, Tsung-Yi Tang, Applied Physics Letters . 2007,第15期

机译：InGaN / GaN量子阱的预应变生长与载流子密度有关的光谱的无磷白光发光二极管
2. High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes [J] . Seoung-Hwan Park, Doyeol Ahn, Jong-Wook Kim Applied Physicsletters . 2009,第3期

机译：高效交错式530 nm InGaN / InGaN / GaN量子阱发光二极管
3. Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array [J] . Horng-Shyang Chen, Yu-Feng Yao, Che-Hao Liao, Optics Letters . 2013,第17期

机译：InGaN / GaN量子阱纳米棒发光二极管阵列的规则图案生长的发光器件
4. Can we fabricate efficient white-light InGaN/GaN quantum-well light-emitting diode without using phosphors? [C] . C. C. Yang, Chi-Feng Huang, Dong-Ming Yeh, Quantum Electronics and Laser Science Conference . 2007

机译：我们可以生产高效的白光Ingan / GaN量子阱发光二极管，无需使用磷光体？
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes [O] . Po-Hsun Lei, Po-Chun Yang, Po-Chun Huang 2021

机译：聚苯乙烯纳米光学光刻法制备的光子晶体结构P-GAN纳米棒的研究提高了INGAN / GAN绿色发光二极管光提取效率
7. InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes [O] . G.F. Yang, Q. Zhang, J. Wang, 2016

机译：选择性生长的GaN微平面上的InGaN / GaN多量子阱以及无荧光白光发光二极管的应用

Can we fabricate efficient white-light InGaN/GaN quantum-well light-emitting diode without using phosphors?

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