METHOD OF SCREENING HIGH-POWER InGaN/GaN LIGHT-EMITTING DIODES

摘要

FIELD: physics.;SUBSTANCE: method includes measuring spectral density of the low-frequency noise of each forward-biased light-emitting diode (LED) and current density in the range 0.1J10 A/cm² before and after the process of ageing a LED for least 50 hours. Ageing is carried out at temperature of the p-n-junction in the range T_J=50-150°C, ambient temperature in the range T_b=25-120°C and current density through the forward-biased LED in the range J=35-100 A/cm². LEDs with an operating life of less than 50000 hours are identified from the low-frequency noise spectral density thereof after the ageing process which is more than an order higher than values before the ageing process.;EFFECT: wider field of use owing to the screening of LEDs with an operating life shorter than 50000 hours for LEDs of any manufacturer, faster screening process.;5 ex