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High-Power Blue-Violet Semipolar (2021) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2

机译:高功率蓝紫色半极性(2021)InGaN / GaN发光二极管,具有200A / cm2的低效率下垂

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摘要

We report a high-power blue light-emitting diode (LED) with a high external quantum efficiency and low droop on a free-standing (2021) GaN substrate. At a forward current of 20 mA, the LED showed a peak external quantum efficiency of 52% and an output power of 30.6 mW. In higher current density regions, the LED also showed outstanding performance, with droop ratios of 0.7% at 35 A/cm2, 4.3% at 50 A/cm2, 8.5% at 100 A/ cm2, and 14.3% at 200 A/cm2. The output power and external quantum efficiency at 200A/cm2 were 266.5 mW and 45.3%, respectively.
机译:我们报道了在独立式(2021)GaN衬底上具有高外部量子效率和低下降的大功率蓝色发光二极管(LED)。在20 mA的正向电流下,LED的峰值外部量子效率为52%,输出功率为30.6 mW。在较高电流密度的区域中,LED还表现出出色的性能,下垂率在35 A / cm2时为0.7%,在50A / cm2时为4.3%,在100A / cm2时为8.5%,在200A / cm2时为14.3%。 200A / cm2时的输出功率和外部量子效率分别为266.5 mW和45.3%。

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  • 来源
    《Annales de l'I.H.P》 |2011年第8期|p.082104.1-082104.3|共3页
  • 作者单位

    Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A;

    Materials Department, University of California, Santa Barbara, CA 93106, U.S.A;

    Materials Department, University of California, Santa Barbara, CA 93106, U.S.A;

    Optoelectronic Laboratory, Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan;

    Materials Department, University of California, Santa Barbara, CA 93106, U.S.A;

    Materials Department, University of California, Santa Barbara, CA 93106, U.S.A;

    Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A,Materials Department, University of California, Santa Barbara, CA 93106, U.S.A;

    Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A,Materials Department, University of California, Santa Barbara, CA 93106, U.S.A;

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