机译:高功率蓝紫色半极性(2021)InGaN / GaN发光二极管,具有200A / cm2的低效率下垂
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A;
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A;
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A;
Optoelectronic Laboratory, Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan;
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A;
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A;
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A,Materials Department, University of California, Santa Barbara, CA 93106, U.S.A;
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A,Materials Department, University of California, Santa Barbara, CA 93106, U.S.A;
机译:排除注入效率是导致半极性(2021)InGaN / GaN发光二极管效率下降的主要原因
机译:具有厚有源层设计的大功率低漂移紫光半极性(3031)InGaN / GaN发光二极管
机译:高功率,低效率下降半极性(2021)单量子阱蓝色发光二极管
机译:减少生长在图案化硅基板上的半极性(1101)InGaN / GaN发光二极管中的效率下降
机译:半极性(2021)蓝色和绿色InGaN基激光二极管的应力工程。
机译:聚苯乙烯纳米光学光刻法制备的光子晶体结构P-GAN纳米棒的研究提高了INGAN / GAN绿色发光二极管光提取效率
机译:用弱相空间填充效应的改进速率方程分析半极性InGaN量子阱发光二极管的低效率下垂