Improved Performance in Charge-Trap-Type Flash Memories with an Al203Dielectric by Using Bandgap Engineering of Charge-Trapping Layers

摘要

A band-engineered configuration of the new polycrystalline Si / Al_2O_3/ Si_3N_4/ SiO_2/Si(SANOS) device structure with a non-uniform nitride composition is proposed for high-densityflash memories. The dramatic improvement can be attributed to the charge trapping efficiency, thedata retention and the cycling endurance performance. The SANOS device designed in this paperholds promise for applications to next-generation charge-trap memory devices.