Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

摘要

The effects of the physical damages induced by heavy ion irradiation on the performance of partially-depleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are observed due to the random strike of heavy ions. A decrease of the saturation current and transconductance, and an enhanced gate-induced drain leakage current are observed, which are mainly attributed to the displacement damages that may be located in the channel, the depletion region of the drain/body junction or the gate-to-drain overlap region. Further, PDSOI devices with and without body contact are compared, which reveals the differences in the threshold voltage shift, the drain-induced barrier lowing effect, the transconductance and the kink effect. The results may provide a guideline for radiation hardened design.