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首页> 外文期刊>Journal of Physics. Condensed Matter >Over-coordination and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic properties
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Over-coordination and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic properties

机译:氢化纳米结构硅薄膜的过度配位和有序:它们对应变和电子性能的影响

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摘要

A set of hydrogenated nanostructured silicon films consisting of Si nanoparticles with a dense phase embedded in an amorphous matrix are analysed by means of several spectroscopic tools. Medium and short range order are determined by Raman spectroscopy and the average coordination versus the hydrogen content is measured from x-ray absorption spectroscopy. The improvement of transport properties such as the normalized photoconductivity with respect to that of hydrogenated amorphous silicon is explained by an inhomogeneous distribution of constraints in the samples. Our results on the order at different scales agree well with the paracrystalline model and suggest a well relaxed host matrix.
机译:借助于几种光谱学工具分析了一组氢化的纳米结构硅膜,该膜由具有嵌入非晶态基质中的致密相的硅纳米颗粒组成。通过拉曼光谱法确定中短程有序,通过X射线吸收光谱法测量相对于氢含量的平均配位。相对于氢化非晶硅而言,传输性能(例如归一化光电导率)的提高是通过样品中约束的不均匀分布来解释的。我们在不同尺度上的有序结果与顺晶模型非常吻合,并表明宿主基质松弛良好。

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