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Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film
Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film
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机译:增强未掺杂和/或N型氢化非晶硅膜的电子性能的方法
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摘要
The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.
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