首页> 外文期刊>Journal of Photopolymer Science and Technology >Evaluation of a Negative 193 nm DUV Resist for the 45 nm Node:Lithography,Degradation Kinetics during Etch and Implant
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Evaluation of a Negative 193 nm DUV Resist for the 45 nm Node:Lithography,Degradation Kinetics during Etch and Implant

机译:负193 nm DUV抗蚀剂对45 nm节点的评估:光刻,蚀刻和植入过程中的降解动力学

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摘要

A 193 nm negative tone resist has been studied in order to estimate its possible use for the 45 nm node.Therefore,its etch resistance versus a 193 nm positive tone model resist has been analysed and its resolution limit determined by 193 nm interferometric immersion lithography.More recently,due to the chemical composition of the negative tone resist,it has been of interest to use it for thin film implant and some preliminary results will be given.
机译:为了估计其在45 nm节点上的可能用途,已经研究了193 nm负型抗蚀剂。因此,已经分析了其与193 nm正型模型抗蚀剂的抗蚀刻性,并通过193 nm干涉浸没光刻法确定了分辨率极限。最近,由于负性抗蚀剂的化学组成,将其用于薄膜植入已引起人们的兴趣,并且将给出一些初步结果。

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