Theoretical investigation of kink effect with deep defects and temperature in AlGaN/GaN HEMTs

摘要

A compact and accurate analytical model for the I-V characteristics of kink effect on AlGaN/GaN high electron mobility transistors is presented. At first, we have developed the conventional charge-control model for the current-voltage characteristics of AlGaN/GaN HEMTs with considering defect concentration. In a second step, we incorporated the temperature effect with defect concentration. The relation between the kink effect, existing deep centers and temperatures has also been confirmed by using an electrical approach, which allows to adjust some of electron transport parameters in order to optimize the output current. As has been found, to incorporate the kink effect in current-voltage characteristics calculations versus temperatures and to affirm that this anomaly is due to the presence of defects, our results agree well with published experimental data.