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Testing of a single-polarity piezoresistive three-dimensional stress-sensing chip

机译:单极性压阻三维应力感应芯片的测试

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A new piezoresistive stress-sensing rosette is developed to extract the components of the three-dimensional (3D) stress tensor using single-polarity (n-type) piezoresistors. This paper presents the testing of a micro-fabricated sensing chip utilizing the developed single-polarity rosette. The testing is conducted using a four-point bending of a chip-on-beam to induce five controlled stress components, which are analyzed both numerically and experimentally. Numerical analysis using finite element analysis is conducted to study the levels of the induced stress components at three rosette-sites and the levels of the stress field non-uniformities, and to simulate the extracted stress components from the sensing rosette. The experimental analysis applied tensile and compressive loads over three rosette-sites at different load increments. The experimentally extracted stress components show good linearity with the applied load and values close to the numerical model.
机译:开发了一种新的压阻应力感应花环,以使用单极性(n型)压阻器提取三维(3D)应力张量的分量。本文介绍了利用已开发的单极性玫瑰花结对微型传感芯片的测试。使用梁上芯片的四点弯曲进行测试,以诱发五个受控应力分量,并在数值和实验上进行了分析。进行了有限元数值分析,研究了三个玫瑰花结部位的诱导应力分量水平和应力场不均匀性水平,并模拟了从传感玫瑰花结中提取的应力分量。实验分析以不同的载荷增量在三个玫瑰花结部位上施加了拉伸和压缩载荷。实验提取的应力分量在施加的载荷下表现出良好的线性,其值接近于数值模型。

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