Piezoresistance in n-type 6H SiC was analyzed on the basis of electron transfer and mobility shift mechanisms for hexagonal many-valley semiconductors. Three important gauge factors or coefficients for piezoresistive sensor application, i.e., the longitudinal, transverse and shear, were calculated by using band parameters. The calculation was compared with experimental results taken from the literature. It was shown that incorporation of the electron transfer and the mobility shift mechanisms gives reasonable interpretation for the piezoresistance in n-type 6H SiC within the temperature range from 300 K to 773 K, and impurity concentration n = 2 x 10(19) to 3.3 x 10(19) cm(-3). These conditions correspond to typical operation ranges of state-of-the-art MEMS-based piezoresistive sensors.
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机译：基于六方多谷半导体的电子转移和迁移率迁移机制，对n型6H SiC中的压阻进行了分析。使用带参数计算了压阻传感器应用的三个重要的量规系数或系数，即纵向，横向和剪切力。将计算结果与文献中的实验结果进行了比较。结果表明，结合电子转移和迁移率迁移机理，可以合理解释n型6H SiC在300 K至773 K的温度范围内，杂质浓度n = 2 x 10（19）至3.3的压阻。 x 10（19）厘米（-3）。这些条件对应于基于MEMS的最新压阻传感器的典型工作范围。
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