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Resistance element with specific piezoresistance coefficient, stress-compensated sensor system and method

机译:具有特定压阻系数的电阻元件,应力补偿传感器系统和方法

摘要

A resistance element having a specific piezoresistance coefficient, the resistance element comprising: a resistance region of a single conductivity type formed in a semiconductor substrate, the semiconductor substrate comprising a first main surface area, the resistance region being parallel to the main surface area in a lateral direction and perpendicular to the vertical direction Main surface area extends, wherein the resistance region is isolated from the semiconductor substrate in the lateral direction and for a stress component comprises a first piezoresistive coefficient for a current flow in the lateral direction and a second piezoresistive coefficient, which is different from the first piezoresistive coefficient, for a current flow in the vertical direction; a first contact structure configured to contact at least a portion of a first area of the resistance region that pa is positioned parallel to the main surface area and at a first distance from the main surface area; a second contact structure configured to be in contact with at least part of a second surface of the resistance region, which is different from the first surface, parallel to the main surface area and at a second distance to the major surface area that is different from the first distance; wherein the resistance element is configured in response to an input signal applied to at least one of the first contact structure and the second contact structure, a current flow distribution within the resistance region between the first contact structure and the generate a second contact structure, the current flow distribution having a lateral component and a vertical component, a combination of the lateral component and the vertical component leading to a piezoresistance coefficient of the resistance element, which is defined by the relationship between the lateral component in the lateral direction in the resistance region with the first piezoresistance coefficient for the current flow in the lateral direction and the vertical component in the vertical direction in the resistance region with the second piezoresistance coefficient for the current flow in the vertical direction the resistance element is designed such that a relationship between the lateral component and the vertical component within the resistance region is obtained, which leads to the specific piezoresistance coefficient; the resistance region comprises a limiting structure which is formed such that the ratio between the lateral component and the vertical component within the resistance region is obtained, which leads to the specific piezoresistance coefficient; andwherein the delimiting structure is formed such that the resistance region comprises a cross-sectional reduction in the lateral direction in a partial region.
机译:一种具有特定压阻系数的电阻元件,该电阻元件包括:在半导体衬底中形成的单一导电类型的电阻区域,该半导体衬底包括第一主表面区域,该电阻区域在第二方向上平行于主表面区域。主表面区域延伸,其中电阻区域在横向方向上与半导体衬底隔离,并且应力成分包括横向电流的第一压阻系数和第二压阻系数对于垂直方向的电流,与第一压阻系数不同;第一接触结构,其被配置为接触电阻区域的第一区域的至少一部分,该第一区域pa平行于主表面区域并且与主表面区域相距第一距离。第二接触结构,其构造成与电阻区域的与第一表面不同的第二表面的至少一部分接触,该第二表面平行于主表面并且与主表面的第二距离不同于第二表面。第一距离;其中,电阻元件被配置为响应于施加到第一接触结构和第二接触结构中的至少一个的输入信号,在第一接触结构和第二接触结构之间的电阻区域内的电流分布,产生第二接触结构。具有横向分量和垂直分量的电流分布,横向分量和垂直分量的组合导致电阻元件的压阻系数,其由电阻区域中横向分量在横向上的关系定义通过在电阻区域中具有用于横向方向的电流的第一压阻系数和在垂直方向上的垂直分量,以及在电阻区域中具有用于第二方向的电流的第二压阻系数,来设计电阻元件,使得横向方向之间的关系组件和顶点获得电阻区域内的l分量,从而得到特定的压阻系数;电阻区域包括限制结构,该限制结构形成为使得获得电阻区域内的横向分量和竖直分量之间的比率,这导致比压阻系数。所述限界结构形成为使得所述电阻区域在部分区域中包括在横向方向上的横截面减小。

著录项

  • 公开/公告号DE102014212651B4

    专利类型

  • 公开/公告日2020-02-06

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE201410212651

  • 发明设计人 UDO AUSSERLECHNER;

    申请日2014-06-30

  • 分类号H01L27/20;H01L43/04;H01L41/113;H01L41/04;G01L9/06;G01L1/18;

  • 国家 DE

  • 入库时间 2022-08-21 11:02:11

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