A method for producing monocrystalline piezoresistances and pressure sensor elements with such piezoresistors

摘要

With the present invention, a method for producing monocrystalline piezoresistances in the surface of a monocrystalline silicon layer proposed, which, by an insulation layer against the surrounding substrate are electrically insulated and thus also in the high temperature range can be used for measuring.In accordance with the invention, first at least one doping in the resistor region of the silicon surface is introduced. Then, an electrical insulation (23) of the doped resistance zone (21) is generated against the adjacent silicon. For this purpose, there is at least one of the doped resistance zone (21), and below the doped resistance zone (21) extending region (23) of the silicon layer (10) etched porous. This porous silicon is finally oxidized.