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Polydimethylsiloxane-based pattern transfer process for the post-IC integration of MEMS onto CMOS chips

机译:基于聚二甲基硅氧烷的图案转移工艺,用于将MEMS后IC集成到CMOS芯片上

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This paper presents a novel pattern transfer process of LIGA and UV-LIGA MEMS onto CMOS chips using polydimethylsiloxane (PDMS) replication and electroplating-based post-IC integration techniques. An array of cylindrical posts was fabricated by the standard LIGA process and an inverse replica was made using a PDMS replication technique. The replicated PDMS mold was used to transfer the LIGA MEMS onto a CMOS chip using electroplating. For the pattern transfer of UV-LIGA MEMS onto CMOS chips, double-layered circular spiral inductors were fabricated using the UV-LIGA technique as metallic master molds. Inverse replicas of the inductors were built in PDMS as double-layered PDMS electroplating mold (PEM). This PEM was aligned and attached onto the chips, and electroplating was performed to transfer the metallic UV-LIGA MEMS inductors onto the chips. The transferred inductors showed a self-resonant frequency of 7.5 GHz, an inductance of 2.11 nH, and a Q-factor of 78.9 at 0.6 GHz. [References: 11]
机译:本文介绍了一种使用聚二甲基硅氧烷(PDMS)复制和基于电镀的后IC集成技术将LIGA和UV-LIGA MEMS图案转移到CMOS芯片上的新颖方法。通过标准的LIGA工艺制造了一系列圆柱柱,并使用PDMS复制技术制作了反向复制品。复制的PDMS模具用于通过电镀将LIGA MEMS转移到CMOS芯片上。为了将UV-LIGA MEMS的图案转移到CMOS芯片上,使用UV-LIGA技术作为金属母模制造了双层圆形螺旋电感器。电感器的反向复制品在PDMS中构建为双层PDMS电镀模具(PEM)。对准该PEM并将其附着到芯片上,并执行电镀以将金属UV-LIGA MEMS电感器转移到芯片上。转移的电感器在6.5 GHz时显示出7.5 GHz的自谐振频率,2.11 nH的电感和78.9的Q因子。 [参考:11]

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