An Analytic Model for Estimating the Length of the Velocity Saturated Region in Double Gate Bilayer Graphene Transistors

摘要

An analytical model for surface potential of asymmetric double gate Bilayer Graphene (BLG) transistors is presented on the basis of two-dimensional Poisson’s equation. To verify the accuracy of potentialmodel, themodelling data are comparedwith the simulation data of FlexPDE program and a good agreement is observed. From surface potential expression, the device behaviour in velocity saturation region is investigated. As a result, lateral electric field and length of velocity saturation region (L_d) are formulated and their dependence on several device parameters is carefully examined.