机译:双栅石墨烯纳米带晶体管的饱和速度区域长度模型
School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Penang, Malaysia;
Department of Computer Engineering, Ashtian Branch, Islamic Azad University, Ashtian, Iran;
Department of Electronic Engineering, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudaijohor Darul Takzim, Malaysia;
School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Penang, Malaysia;
机译:双栅石墨烯纳米带晶体管饱和区的建模与仿真
机译:双栅石墨烯纳米带晶体管饱和区的建模与仿真
机译:估算双栅双层石墨烯晶体管速度饱和区长度的解析模型
机译:建模石墨烯纳米带晶体管的速度饱和区域
机译:碳纳米管和石墨烯纳米带晶体管的半分析模型。
机译:单轴应变对双栅石墨烯纳米带场效应晶体管性能影响的分析模型
机译:单轴应变对双栅石墨烯纳米带场效应晶体管性能影响的分析模型