首页> 外文期刊>Journal of Nanoelectronics and Optoelectronics >Time Dependent Optical Annealing Effects on Al Doped ZnO Transparent Conducting Oxide Thin Films
【24h】

Time Dependent Optical Annealing Effects on Al Doped ZnO Transparent Conducting Oxide Thin Films

机译:铝掺杂ZnO透明导电氧化物薄膜的时变光退火效应

获取原文
获取原文并翻译 | 示例
           

摘要

Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing spin coating method for transparent conducting oxide applications. In this paper, different mol% of Al doped ZnO thin films were prepared and analyzed. And then selected 0.5 mol% Al doped ZnO thin films were prepared for time dependent optical annealing process to know the effects on the structural, optical, and electrical properties. Experimental results showed that optical annealing process affected the microstructure, electrical resistance and optical transmittance of the AZO thin films. X-ray diffraction analysis showed that all films have a (002) peak with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region. Sheet resistance result revealed that optimized RTA improves conductance of films.
机译:铝掺杂氧化锌(AZO)薄膜已通过旋涂方法沉积在玻璃基板上,用于透明导电氧化物应用。本文制备并分析了不同摩尔%的铝掺杂ZnO薄膜。然后制备选择的0.5 mol%Al掺杂的ZnO薄膜用于随时间变化的光学退火工艺,以了解其对结构,光学和电性能的影响。实验结果表明,光学退火工艺会影响AZO薄膜的微观结构,电阻和透光率。 X射线衍射分析表明,所有膜均具有(002)峰,其c轴优选垂直于基材表面。在可见光波长区域内,AZO薄膜的光学透射率光谱显示出高于约80%的透射率。薄层电阻结果表明优化的RTA可以改善薄膜的电导率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号