首页> 外文期刊>Journal of nanoscience and nanotechnology >BaTiO_3 Doped Na_(0.5)K_(0.5)NbO_3 Thin Films Deposited by Using Eclipse Shutter Enhanced Pulsed Laser Deposition Method
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BaTiO_3 Doped Na_(0.5)K_(0.5)NbO_3 Thin Films Deposited by Using Eclipse Shutter Enhanced Pulsed Laser Deposition Method

机译:Eclipse快门增强脉冲激光沉积法沉积BaTiO_3掺杂的Na_(0.5)K_(0.5)NbO_3薄膜

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摘要

We have investigated structural, electrical, and electro-mechanical properties of lead-free piezoelectric BaTiO_3 doped Na_(0.5)K_(0.5)NbO_3 (BTO-NKN) thin films deposited by pulsed laser deposition (PLD) methods. BTO-NKN thin films have been deposited on La_(0.5)Sr_(0.5)CoO_3 (LSCO) bottom electrodes with LaAlO_3 (LAO) substrates. X-ray diffraction data have shown that all the BTO-NKN and bottom electrodes are highly oriented with their c-axes normal to the substrates. In order to improve the morphology of BTO-NKN thin films, we have located an eclipse shutter between a target and a substrate. Root-mean-square roughness was changed from 91 nm to 21 nm with eclipse shutter enhanced PLD (E-PLD) method. Furthermore, the enhanced surface morphology leads to the improvement in electrical or electro-mechanical properties mainly due to increased density. Typical capacitance and d_(33) values of a BTO-NKN film deposited by E-PLD method are 1000 pF and 30 pm/V, respectively.
机译:我们研究了通过脉冲激光沉积(PLD)方法沉积的无铅压电BaTiO_3掺杂的Na_(0.5)K_(0.5)NbO_3(BTO-NKN)薄膜的结构,电气和机电性能。 BTO-NKN薄膜已沉积在具有LaAlO_3(LAO)衬底的La_(0.5)Sr_(0.5)CoO_3(LSCO)底部电极上。 X射线衍射数据表明,所有的BTO-NKN和底部电极都高度取向,其c轴垂直于基板。为了改善BTO-NKN薄膜的形貌,我们在目标和基板之间放置了一个日食快门。使用日光快门增强PLD(E-PLD)方法,将均方根粗糙度从91 nm更改为21 nm。此外,增强的表面形态导致电气或机电性能的改善,这主要归因于密度的增加。通过E-PLD方法沉积的BTO-NKN膜的典型电容和d_(33)值分别为1000 pF和30 pm / V。

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