Effects of oxygen pressure on the c-axis oriented growth of LiNbO_3 thin film on SiO_2/Si substrate by pulsed laser deposition

摘要

Bulk material of lithium niobate (LiNbO_3) has been widely used for electro-optical modulators, surface acoustic wave devices, second harmonic generators, optical switches and optical waveguide devices, due to its pronounced piezoelectric, pyroelectric, electrooptic, acousto-optic, photorefractive and nonlinearoptic properties. Recently, however there have been interests on the application of LiNbO_3 thin films as waveguide devices. From the technological point of view, the prospect of LiNbO_3 film on a Si substrate is particularly attractive because the Si provides a rigid substrate ideal for lithographic techniques, and this will make it possible to develop integrated electro-optics technology in which sources, detectors, electronics and nonlinear optical waveguides may be produced on a Si wafer.