Effect of Microstructure on Electrical and Optical Properties of ITO Thin Film Deposited by D.C. Magnetron Sputtering (II)

摘要

The electrical and the optical properties were investigated to find the optimum microstructure of ITO thin films deposited by D.C. magnetron sputtering. Carrier concentration and carrier mobility of ITO thin films were measured, the transmittance of them also was done. As O_2 flow rate and substrate temperature increased, the transmittance of ITO thin film increased because ITO particles formed coarse and good crystalline. The sheet resistance was the minimum at O_2 flow rate, 0.3 sccm, and the minimum value was 9OMEGA/square at substrate temperature, 350 deg C. The electrical and the optical properties of ITO thin film depended on the morphology and the crystallinity.