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首页> 外文期刊>Journal of Electron Microscopy >Local symmetry breaking of a thin crystal structure of -Si 3N 4 as revealed by spherical aberration corrected high-resolution transmission electron microscopy images
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Local symmetry breaking of a thin crystal structure of -Si 3N 4 as revealed by spherical aberration corrected high-resolution transmission electron microscopy images

机译:球面像差校正的高分辨率透射电子显微镜图像显示-Si 3N 4的薄晶体结构的局部对称断裂

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This report is an extension of the study for structural imaging of 5-6 nm thick -Si 3N 4 [0001] crystal with a spherical aberration corrected transmission electron microscope by Zhang and Kaiser [2009. Structure imaging of -Si3N4 by spherical aberration-corrected high-resolution transmission electron microscopy. Ultramicroscopy 109, 1114-1120]. In this work, a local symmetry breaking with an uneven resolution of dumbbells in the six-membered rings revealed in the reported images in the study of Zhang and Kaiser has been analyzed in detail. It is found that this local asymmetry in the image basically is not relevant to a slight mistilt of the specimen and/or a beam tilt (coma). Rather the certain variation of the tetrahedral bond length of Si-N(4) in the crystal structure is found to be responsible for the uneven resolution with a local structural variation from region to region. This characteristic of the variation is also supposed to give a distorted lattice of apparently 2°-2.5° deviations from the perfect hexagonal unit cell as observed in the reported image in the work of Zhang and Kaiser. It is discussed that this variation may prevail only in a thin specimen with a thickness ranging ~≤5-6 nm. At the same time, it is noted that the average of the bond length variation is close to the fixed length known in a bulk crystal of -Si3N4. The Author 2012. Published by Oxford University Press [on behalf of Japanese Society of Microscopy]. All rights reserved.
机译:该报告是Zhang和Kaiser [2009年]用球差校正的透射电子显微镜对5-6 nm厚的-Si 3N 4 [0001]晶体进行结构成像研究的扩展。 -Si3N4的球差校正高分辨率透射电子显微镜结构成像。 109,1114-1120]。在这项工作中,详细分析了张和凯泽研究报告的图像中揭示的六元环哑铃的不对称分辨率而导致的局部对称破坏。可以发现,图像中的这种局部不对称基本上与样品的轻微倾斜和/或光束倾斜(昏迷)无关。相反,发现晶体结构中Si-N(4)的四面体键长的某些变化是造成分辨率不均匀的原因,区域之间存在局部结构变化。这种变化的特征还被认为会产生与理想的六角形晶胞明显2°-2.5°偏差的扭曲晶格,如Zhang和Kaiser的工作所报道的图像所示。据讨论,这种变化可能仅在厚度范围为≤≤5-6nm的薄样品中普遍存在。同时,应注意的是,键长变化的平均值接近于-Si 3 N 4体晶体中已知的固定长度。作者2012。由牛津大学出版社出版[代表日本显微学会]。版权所有。

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