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Local symmetry breaking of a thin crystal structure of β-Si3N4 as revealed by spherical aberration corrected high-resolution transmission electron microscopy images

机译:球差校正高分辨率透射电子显微镜图像显示的β-Si 3 N 4 薄晶体结构的局部对称断裂

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摘要

This report is an extension of the study for structural imaging of 5–6 nm thick β-Si3N4 [0001] crystal with a spherical aberration corrected transmission electron microscope by Zhang and Kaiser [2009. Structure imaging of β-Si3N4 by spherical aberration-corrected high-resolution transmission electron microscopy. Ultramicroscopy 109, 1114–1120]. In this work, a local symmetry breaking with an uneven resolution of dumbbells in the six-membered rings revealed in the reported images in the study of Zhang and Kaiser has been analyzed in detail. It is found that this local asymmetry in the image basically is not relevant to a slight mistilt of the specimen and/or a beam tilt (coma). Rather the certain variation of the tetrahedral bond length of Si–N(4) in the crystal structure is found to be responsible for the uneven resolution with a local structural variation from region to region. This characteristic of the variation is also supposed to give a distorted lattice of apparently 2°–2.5° deviations from the perfect hexagonal unit cell as observed in the reported image in the work of Zhang and Kaiser. It is discussed that this variation may prevail only in a thin specimen with a thickness ranging ∼≤5–6 nm. At the same time, it is noted that the average of the bond length variation is close to the fixed length known in a bulk crystal of β-Si3N4.
机译:本报告是通过球差校正透射电子显微镜对5–6 nm厚的β-Si 3 N 4 [0001]晶体进行结构成像研究的扩展。 Zhang and Kaiser [2009。 β-Si 3 N 4 的球差校正高分辨率透射电子显微镜成像。 109,1141-1120]。在这项工作中,详细分析了张和凯泽研究报告的图像中揭示的六元环上的局部对称性,哑铃的分辨率不均匀。可以发现,图像中的这种局部不对称基本上与样本的轻微倾斜和/或光束倾斜(昏迷)无关。相反,发现晶体结构中Si–N(4)的四面体键长的某些变化是造成分辨率不均匀的原因,区域之间存在局部结构变化。这种变化的特征也被认为会产生一个畸变的晶格,与理想的六边形晶胞有明显的2°-2.5°偏差,如在Zhang和Kaiser的工作中所报道的图像中所观察到的。据讨论,这种变化可能仅在厚度范围约为≤5-6nm的薄样品中普遍存在。同时,注意到,键长变化的平均值接近于β-Si 3 N 4 的块状晶体中已知的固定长度。

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  • 来源
    《Journal of Electron Microscopy》 |2012年第3期|p.145-157|共13页
  • 作者单位

    1Department of Physics, Kyungsung University, Busan 608-736, Republic of Korea 2Materials Science Electron Microscopy, Ulm University, 89060 Ulm, Germany 3Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, A-8700 Leoben, Austria;

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