Peracetic acid as active species in mixtures for selective etching of SiGe/Si layer systems - Aspects of chemistry and analytics

摘要

The ever increasing demand for faster computers has exhausted the capabilities of silicon as the basic material for chip production. This is due to the physical limits of silicon itself and can only be overcome by switching to another material. Until this problem is solved a variant of the normal silicon, called "strained silicon" (sSi) is used. In the production of sSOI-wafers (strained silicon on insulator) an intermediate SiGe/sSi layer system is created (Figure 1) from which the SiGe layer is then removed to expose the strained silicon layer.