Ferromagnetism in GaAs/lnAs/GaAs Quantum Dot Layer delta-doped with Mn

Vladimir A. Kulbachinskii; Leonid N. Oveshnikov; Boris A. Aronzon

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Ferromagnetism in GaAs/lnAs/GaAs Quantum Dot Layer delta-doped with Mn

机译：δ掺杂Mn的GaAs / lnAs / GaAs量子点层中的铁磁性

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Transport, magnetotransport and magnetic properties of structures GaAs/lnAs/GaAs with the InAs quantum dot (QD) layer have been investigated in the temperature interval 4.2

机译：研究了在4.2

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《Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena》 |2015年第null期|共4页
作者
Vladimir A. Kulbachinskii; Leonid N. Oveshnikov; Boris A. Aronzon;
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原文格式 PDF
正文语种 eng
中图分类半导体物理学;
关键词
Diluted magnetic semiconductors; Ferromagnetism; Delta-Mn Doping; InAs Quantum Dots;

机译：稀磁半导体;铁磁性;δ-Mn掺杂;InAs量子点;

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专利

1. Ferromagnetism in GaAs/lnAs/GaAs Quantum Dot Layer delta-doped with Mn [J] . Vladimir A. Kulbachinskii, Leonid N. Oveshnikov, Boris A. Aronzon Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2015,第Null期

机译：δ掺杂Mn的GaAs / lnAs / GaAs量子点层中的铁磁性
2. Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer delta-doped with Mn [J] . Kalentyeva I. L., Vikhrova O. V., Danilov Yu. A., Semiconductors . 2016,第11期

机译：热退火对IngaAs / GaAs量子阱的结构光致发光的影响及低温GaAs层掺杂Mn
3. Effects of thin GaAs insertion layer on lnAs/(lnGaAs)/lnP(001) quantum dots grown by metalorganic chemical vapor deposition [J] . Kwangmin Park, Pilkyung Moon, Eungjin Ahn, Applied Physics Letters . 2005,第22期

机译：薄GaAs插入层对金属有机化学气相沉积法生长lnAs /（InGaAs）/ lnP（001）量子点的影响
4. Ferromagnetism in GaAs/lnAs/GaAs Quantum Dot Layer delta-doped with Mn [C] . Vladimir A. Kulbachinskii, Leonid N. Oveshnikov, Boris A. Aronzon Achievements in magnetism . 2014

机译：δ掺杂Mn的GaAs / lnAs / GaAs量子点层中的铁磁性
5. Coherent Spectroscopy of InGaAs Quantum Dots =Koh?rente Spektroskopie an InGaAs Quantenpunkten [D] . Strau?, Stefan Maximilian. 2018

机译：Igaas量子点的相干壮观= koh？怨恨不同的区别和Ingaas Pollarts
6. Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer [O] . Antonio D Utrilla, Jose M Ulloa, Alvaro Guzman, 2014

机译：具有优化的GaAsSbN覆盖层的InAs / GaAs量子点的长波长室温发光
7. Molecular beam epitaxy of modulation doped N-AlGaAs/(InAs/GaAs)/GaAs superlattices at thikness of InAs layers below and near threshold of nucleation quantum dots for high frequency applications [O] . Mokerov V.G., Fedorov Yu.V., Hook A.V., 2000

机译：在高频应用中，在成核量子点阈值以下和附近的InAs层厚度下，调制掺杂N-AlGaAs /（InAs / GaAs）/ GaAs超晶格的分子束外延
8. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth. [R] . Jasinski, J., Babinski, A., Czeczott, M., 2000

机译：帽层过度生长引起的InGaas / Gaas量子点相互作用。

Ferromagnetism in GaAs/lnAs/GaAs Quantum Dot Layer delta-doped with Mn

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