GaAs:Mn layer magnetization in GaAs-based heterostructures containing InGaAs quantum well

摘要

Magnetic properties of a GaAs-based heterostructures containing InGaAs quantum well and 2 nm thick GaAs layer doped with 5 at. % Mn (GaAs:Mn) on flat and vicinal substrates were studied. Two types of ferromagnetism were found. In the heterostructures grown on the flat substrate parallel to the (001) GaAs plane the magnetization obeys the Bloch T ~(3/2) temperature dependence while for the structures grown on the vicinal surface grown (disoriented by 3°) the magnetization follows percolation dependence.