Growth, optical absorption and resistivity of (Ga_(0.6)In_(0.4))_2Se_3 and (Ga_(0.594)In_(0.396)Er_(0.01))_2Se_3 single crystals

摘要

The phase diagram of the Ga_2Se_3-In_2Se_3 system was investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ2 phase with the compositions (Ga_(0.6)In_(0.4))_2Se_3 and (Ga_(0.594)In_(0.396)Er_(0.01))_2Se_3 were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0. 01 eV. The resistance of the single crystals of (Ga_(0.6)In_(0.4))_2Se_3 (R=500 MΩ) and (Ga_(0.594)In_(0.396)Er_(0.01))_2Se_3 (R=210 MΩ) was measured.